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High thermal conductivity in cubic boron arsenide crystals

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Science  05 Jul 2018:
eaat8982
DOI: 10.1126/science.aat8982

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Abstract

The high density of heat generated in power electronics and optoelectronic devices is a critical bottleneck in their application. New, high thermally-conducting materials are needed to effectively dissipate heat and thereby enable enhanced performance of power controls, solid-state lighting, communication, and security systems. We report our experimental discovery of high thermal conductivity of 1000 ± 90 W/m/K at room temperature in cubic boron arsenide (BAs) grown through modified chemical vapor transport technique. Such thermal conductivity is a factor of 3 higher than that of silicon carbide and surpassed only by diamond and the basal plane value of graphite. This work establishes BAs as the first realization of a new class of ultrahigh thermal conductivity materials predicted by a recent theory, and a potential revolutionary thermal management material.

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