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Gate-induced superconductivity in a monolayer topological insulator

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Science  25 Oct 2018:
eaar4426
DOI: 10.1126/science.aar4426

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Abstract

The layered semimetal WTe2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a small gate voltage. This discovery offers possibilities for gate-controlled devices combining superconductivity and non-trivial topological properties, and could provide a basis for quantum information schemes based on topological protection.

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