PT - JOURNAL ARTICLE AU - McGinness, John E. TI - Mobility Gaps: A Mechanism for Band Gaps in Melanins AID - 10.1126/science.177.4052.896 DP - 1972 Sep 08 TA - Science PG - 896--897 VI - 177 IP - 4052 4099 - http://science.sciencemag.org/content/177/4052/896.short 4100 - http://science.sciencemag.org/content/177/4052/896.full SO - Science1972 Sep 08; 177 AB - The semiconductor behavior of melanins is reviewed and compared with quantum mechanical models of conduction in amorphous solids. The available data are consistent with extensions of Mott's basic model for amorphous semiconductors, whereas they are inconsistent with crystalline semiconductor models. An investigation of the specific conduction mechanisms operative in melanins in terms of the amorphous model should reveal important aspects of the band structure.