Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy

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Science  26 Apr 1991:
Vol. 252, Issue 5005, pp. 547-548
DOI: 10.1126/science.252.5005.547


Studies of C60 overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C60 monolayer.

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