A Light-Emitting Field-Effect Transistor

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Science  03 Nov 2000:
Vol. 290, Issue 5493, pp. 963-965
DOI: 10.1126/science.290.5493.963

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We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor α-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.

  • * To whom correspondence should be addressed. E-mail: hendrik{at}; ananth{at}

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