Electron Holography in Microelectronics

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Science  19 Jul 2002:
Vol. 297, Issue 5580, pp. 305
DOI: 10.1126/science.297.5580.305a

During the fabrication of microelectronic devices, the ion implantation and annealing processes lead to the diffusion of the dopant atoms. Although secondary ion mass spectrometry and detailed process simulations have been used to characterize and monitor the depth of the dopant distribution in the devices, little is known about the lateral diffusion of dopants. As device dimensions get smaller, monitoring this lateral diffusion and the subsequent distribution of electric field throughout the device will become an increasingly important issue.

Addressing this point, Gribelyuk et al. show that electron holography can be used to provide a two-dimensional map of the electrostatic potential in submicrometer devices, revealing the extent of both the depth and lateral diffusion of the dopant atoms. With a resolution of 6 nanometers, it should prove a powerful characterization technique in the microelectronics field. — ISO

Phys. Rev. Lett.89, 025502 (2002).

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