Gigahertz Electron Spin Manipulation Using Voltage-Controlled g-Tensor Modulation

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Science  21 Feb 2003:
Vol. 299, Issue 5610, pp. 1201-1204
DOI: 10.1126/science.1080880

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We present a scheme that enables gigahertz-bandwidth three-dimensional control of electron spins in a semiconductor heterostructure with the use of a single voltage signal. Microwave modulation of the Landé g tensor produces frequency-modulated electron spin precession. Driving at the Larmor frequency results in g-tensor modulation resonance, which is functionally equivalent to electron spin resonance but without the use of time-dependent magnetic fields. These results provide proof of the concept that quantum spin information can be locally manipulated with the use of high-speed electrical circuits.

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