Applied Physics

Switching on to Ferroelectric Transistors

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Science  11 Jul 2003:
Vol. 301, Issue 5630, pp. 143-145
DOI: 10.1126/science.301.5630.143e

The ability to maintain an electronic device (a transistor) in the On or Off state without the need for an applied bias is a particularly desirable feature in the design of energy-efficient electronics. Ferroelectric materials, because of their remnant polarization, have two stable states and are thus being developed as the active layer in these sought-after, nonvolatile memory devices. Overcoming the short retention times that limited previous devices, Schrott et al. report the fabrication and characterization of a ferroelectric field-effect transistor using SrRuxTi1-xO3 as the active channel layer and a zirconate titanate oxide as the gate layer. The transistor switched reliably over 10 billion read-write cycles, exhibited good retention times, and provides the opportunity to use conventional lithographic techniques to scale down the sizes and to improve the switching times. Taken together, these results offer the possibility of realizing high-performance electronics with low-power consumption. — ISO

Appl. Phys. Lett. 82, 4770 (2003).

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