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Control of Spin Precession in a Spin-Injected Field Effect Transistor

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Science  18 Sep 2009:
Vol. 325, Issue 5947, pp. 1515-1518
DOI: 10.1126/science.1173667

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Transistors Switch onto Spin

Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a proposed spin-analog of the electronic transistor, the spin field effect transistor. Koo et al. (p. 1515) demonstrate the injection and detection of spin between two ferromagnetic contacts and show how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltage applied to a gate. The results present an experimental realization of the concepts described for the spin-transistor.

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