Report

Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

See allHide authors and affiliations

Science  11 Dec 2009:
Vol. 326, Issue 5959, pp. 1516-1519
DOI: 10.1126/science.1179963

You are currently viewing the abstract.

View Full Text

Log in to view the full text

Log in through your institution

Log in through your institution

Abstract

Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (≤6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.

View Full Text