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Spin Hall Effect Transistor

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Science  24 Dec 2010:
Vol. 330, Issue 6012, pp. 1801-1804
DOI: 10.1126/science.1195816

Article Information

vol. 330 no. 6012 1801-1804

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History: 
  • Received for publication July 29, 2010
  • Accepted for publication November 22, 2010
  • .

Author Information

  1. Jörg Wunderlich1,2,*,
  2. Byong-Guk Park1,*,
  3. Andrew C. Irvine3,*,
  4. Liviu P. Zârbo2,
  5. Eva Rozkotová4,
  6. Petr Nemec4,
  7. Vít Novák2,
  8. Jairo Sinova5,2 and
  9. Tomás Jungwirth2,6
  1. 1Hitachi Cambridge Laboratory, Cambridge CB3 0HE, UK.
  2. 2Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.
  3. 3Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, CB3 0HE, UK.
  4. 4Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic.
  5. 5Department of Physics, Texas A&M University, College Station, TX 77843–4242, USA.
  6. 6School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
  1. To whom correspondence should be addressed. E-mail: jw526{at}cam.ac.uk
  1. * These authors contributed equally to this work.

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