Layer-Resolved Graphene Transfer via Engineered Strain Layers

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Science  15 Nov 2013:
Vol. 342, Issue 6160, pp. 833-836
DOI: 10.1126/science.1242988

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Monolayer Graphene via Two Transfers

Oriented monolayers of graphene containing some bilayer regions can be formed on silicon carbide crystal surfaces, but, to be cost effective, the graphene needs to be exfoliated and transferred to other substrates so that the silicon carbide crystal can be reused. Kim et al. (p. 833, published online 31 October) used a nickel film grown to a thickness designed to impart a particular surface stress as a “handle” to exfoliate the graphene layer for transfer to a silica substrate. An additional gold layer was then used to remove the excess monolayer from the bilayer regions to create a monolayer suitable for electronics applications.


The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one layer. We describe a method in which a graphene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film and transferred to another substrate. The excess graphene is selectively removed with a second exfoliation process with a Au film, resulting in a monolayer graphene film that is continuous and single-oriented.

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