Defect Control

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Science  21 Mar 2014:
Vol. 343, Issue 6177, pp. 1291
DOI: 10.1126/science.343.6177.1291-d

Quantum information processing and nanoscale sensing applications rely on the ability to store and manipulate information encoded into quantum states of matter—quantum bits. Some solid-state implementations look to use the spin of electrons in quantum dots as the storage media. The quantum properties of natural or artificial defect centers (nitrogen vacancy or NV centers) in diamond can be optically addressed and manipulated and can be robust even up to room temperature. Likewise, silicon carbide (SiC) has also been found to have defects that exhibit similar properties to those of the diamond NV centers, including long coherence times that persist up to room temperatures, a high degree of optical polarization, and spin-dependent photoluminescence. Klimov et al. now demonstrate that the spin properties of defects in SiC can be coherently controlled electrically by applying series of voltage pulses to gates surrounding the defects. The compatibility with Si fabrication techniques makes SiC an ideal candidate for the development of integrated quantum technology platforms using scalable quantum control of electron spins in a dense array.

Phys. Rev. Lett. 112, 10.1103/PhysRevLett.112.087601 (2014).

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