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The valley Hall effect in MoS2 transistors

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Science  27 Jun 2014:
Vol. 344, Issue 6191, pp. 1489-1492
DOI: 10.1126/science.1250140

Article Information

vol. 344 no. 6191 1489-1492

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History: 
  • Received for publication December 24, 2013
  • Accepted for publication May 23, 2014

Author Information

  1. K. F. Mak1,2,*,
  2. K. L. McGill2,
  3. J. Park1,3,
  4. P. L. McEuen1,2,*
  1. 1Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.
  2. 2Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA.
  3. 3Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, USA.
  1. *Corresponding author. E-mail: plm23{at}cornell.edu (P.L.M.); km627{at}cornell.edu (K.F.M.)

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