Electron-hole diffusion lengths > 175 μm in solution-grown CH3NH3PbI3 single crystals

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Science  27 Feb 2015:
Vol. 347, Issue 6225, pp. 967-970
DOI: 10.1126/science.aaa5760
  • Fig. 1 MSC structure characterization.

    (A) Images of a piece of as-prepared MAPbI3 single crystal. (B) X-ray diffraction pattern of the ground powder of a single crystal (gray line) and fitted patterns (black line).

  • Fig. 2 Device structure and electrical and optical characterization of the MSC devices and MPC thin films.

    (A) Schematic device structure of the MAPbI3 single-crystal devices. (B) Normalized PL and absorption spectra of the MSCs and MPC thin films. (C) Normalized EQEs of 3-mm-thick and 200-μm-thick MSC photovoltaic devices and a MPC thin-film device. (D) EQE of a 3-mm-thick MSC device, average transmittance of a 25-nm Au electrode, and calculated average IQE of the same MSC device. (E) Responsivity of the 3-mm-thick and 200-μm-thick MSC devices and responsivity calculated from the EQE of the 3-mm-thick MSC device. (F) Current density Jsc versus light intensity IL fitted by JSCILβ for the 3-mm-thick and 200-μm-thick MSC devices.

  • Fig. 3 Carrier mobility characterization of MSCs.

    (A and B) Current-voltage curve for a hole-only MSC device (A) and an electron-only MSC device (B). The insets show the device structure of hole-only and electron-only MSC devices, respectively. Three regions can be identified according to different values of the exponent n: n = 1 is the ohmic region, n = 2 is the SCLC region, and in between is the trap-filled limited region. (C) Schematic illustration of the device for the time-of-flight measurement. (D) The transient current curves of the MSC device show the normalized transient photocurrent under various reverse biases. The carrier transit time is determined by the intercept of the pretransit and posttransit asymptotes of the photocurrent, marked by solid blue circles. Inset shows the charge transit time versus the reciprocal of bias; the solid line is a linear fit to the data.

  • Fig. 4 Carrier recombination lifetime characterization of MSCs.

    (A and B) Impedance spectroscopies (A) and transient photovoltaic curves (B) of the MSC devices under 1 sun and 0.1 sun illumination, respectively, with incident light from the semitransparent Au anode. The TPV decay curves were fitted by a single-exponential decay function. The inset of (A) is the extracted charge recombination lifetime from IS measurement of the MSC device and the MPC thin film at various applied voltage biases under 1 sun illumination. The inset of (B) is the extracted charge recombination lifetime from TPV measurement of the MSC device under various light bias intensities.

Supplementary Materials

  • Electron-hole diffusion lengths >175 μm in solution-grown CH3NH3PbI3 single crystals

    Qingfeng Dong, Yanjun Fang, Yuchuan Shao, Padhraic Mulligan, Jie Qiu, Lei Cao, Jinsong Huang

    Materials/Methods, Supplementary Text, Tables, Figures, and/or References

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    • Materials and Methods
    • Figs. S1 to S11
    • Tables S1 and S2
    • References

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