Article Information
vol. 350 no. 6264 1065-1068
- Received for publication August 12, 2015
- Accepted for publication October 13, 2015
- .
Author Information
- Matin Amani1,2,*,
- Der-Hsien Lien1,2,3,4,*,
- Daisuke Kiriya1,2,*,
- Jun Xiao5,2,
- Angelica Azcatl6,
- Jiyoung Noh6,
- Surabhi R. Madhvapathy1,2,
- Rafik Addou6,
- Santosh KC6,
- Madan Dubey7,
- Kyeongjae Cho6,
- Robert M. Wallace6,
- Si-Chen Lee4,
- Jr-Hau He3,
- Joel W. Ager III2,
- Xiang Zhang5,2,8,
- Eli Yablonovitch1,2,
- Ali Javey1,2,†
- 1Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.
- 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
- 3Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
- 4Department of Electrical Engineering, Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China.
- 5National Science Foundation Nanoscale Science and Engineering Center, University of California, Berkeley, Berkeley, CA 94720, USA.
- 6Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, TX 75080, USA.
- 7Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20723, USA.
- 8Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia.
- ↵†Corresponding author. E-mail: ajavey{at}eecs.berkeley.edu
↵* These authors contributed equally to this work.