Research Article

Phase-change heterostructure enables ultralow noise and drift for memory operation

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Science  11 Oct 2019:
Vol. 366, Issue 6462, pp. 210-215
DOI: 10.1126/science.aay0291

Getting more bits out of PCRAM

Phase-change random access memory (PCRAM) has the ability to both store and process information. It also suffers from noise and electrical drift due to damage that accumulates during the cycling process. Ding et al. developed a phase-change heterostructure where a phase-change material is separated by a confinement material, creating an alternating stack (see the Perspective by Gholipour). This architecture results in ultralow noise, lower drift, and stable multilevel storage capacity, which are potentially useful for new forms of computing.

Science, this issue p. 210; see also p. 186

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