Research Article

Phase-change heterostructure enables ultralow noise and drift for memory operation

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Science  11 Oct 2019:
Vol. 366, Issue 6462, pp. 210-215
DOI: 10.1126/science.aay0291

Article Information

vol. 366 no. 6462 210-215

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History: 
  • Received for publication May 14, 2019
  • Accepted for publication August 8, 2019
  • .

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Author Information

  1. Keyuan Ding1,2,*,
  2. Jiangjing Wang3,4,*,
  3. Yuxing Zhou3,*,
  4. He Tian5,*,
  5. Lu Lu6,
  6. Riccardo Mazzarello7,
  7. Chunlin Jia6,8,
  8. Wei Zhang3,,
  9. Feng Rao1,9,,
  10. Evan Ma10,
  1. 1College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.
  2. 2Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
  3. 3Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.
  4. 4School of Chemistry and Chemical Engineering, Yulin University, Yulin 719000, China.
  5. 5Center of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
  6. 6The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.
  7. 7Institute for Theoretical Solid State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, Aachen 52074, Germany.
  8. 8Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich 52425, Germany.
  9. 9State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  10. 10Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.
  1. Corresponding author. E-mail: wzhang0{at}mail.xjtu.edu.cn (W.Z.); fengrao{at}szu.edu.cn (F.R.); ema{at}jhu.edu (E.M.).
  1. * These authors contributed equally to this work.

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