Research Article
Phase-change heterostructure enables ultralow noise and drift for memory operation
- Keyuan Ding1,2,*,
- Jiangjing Wang3,4,*,
- Yuxing Zhou3,*,
- He Tian5,*,
- Lu Lu6,
- Riccardo Mazzarello7,
- Chunlin Jia6,8,
- Wei Zhang3,†,
- Feng Rao1,9,†,
- Evan Ma10,†
- 1College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.
- 2Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- 3Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.
- 4School of Chemistry and Chemical Engineering, Yulin University, Yulin 719000, China.
- 5Center of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
- 6The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.
- 7Institute for Theoretical Solid State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, Aachen 52074, Germany.
- 8Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich 52425, Germany.
- 9State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
- 10Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.
- ↵†Corresponding author. E-mail: wzhang0{at}mail.xjtu.edu.cn (W.Z.); fengrao{at}szu.edu.cn (F.R.); ema{at}jhu.edu (E.M.).
↵* These authors contributed equally to this work.
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Science 11 Oct 2019:
Vol. 366, Issue 6462, pp. 210-215
DOI: 10.1126/science.aay0291
