Phase-change heterostructure enables ultralow noise and drift for memory operation

Keyuan Ding; Jiangjing Wang; Yuxing Zhou; He Tian; Lu Lu; Riccardo Mazzarello; Chunlin Jia; Wei Zhang; Feng Rao; Evan Ma

doi:10.1126/science.aay0291

Research Article

Phase-change heterostructure enables ultralow noise and drift for memory operation

View ORCID ProfileKeyuan Ding¹,²,*,
View ORCID ProfileJiangjing Wang³,⁴,*,
View ORCID ProfileYuxing Zhou³,*,
View ORCID ProfileHe Tian ⁵,*,
View ORCID ProfileLu Lu⁶,
View ORCID ProfileRiccardo Mazzarello ⁷,
Chunlin Jia⁶,⁸,
View ORCID ProfileWei Zhang ³,†,
View ORCID ProfileFeng Rao ¹,⁹,†,
View ORCID ProfileEvan Ma¹⁰,†

¹College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.
²Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
³Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.
⁴School of Chemistry and Chemical Engineering, Yulin University, Yulin 719000, China.
⁵Center of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
⁶The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.
⁷Institute for Theoretical Solid State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, Aachen 52074, Germany.
⁸Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich 52425, Germany.
⁹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
¹⁰Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.

↵†Corresponding author. E-mail: wzhang0{at}mail.xjtu.edu.cn (W.Z.); fengrao{at}szu.edu.cn (F.R.); ema{at}jhu.edu (E.M.).

↵* These authors contributed equally to this work.

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Science 11 Oct 2019:
Vol. 366, Issue 6462, pp. 210-215
DOI: 10.1126/science.aay0291

Keyuan Ding

1College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.

2Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

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Jiangjing Wang

3Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.

4School of Chemistry and Chemical Engineering, Yulin University, Yulin 719000, China.

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Yuxing Zhou

3Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.

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He Tian

5Center of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.

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Lu Lu

6The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.

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Riccardo Mazzarello

7Institute for Theoretical Solid State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, Aachen 52074, Germany.

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Chunlin Jia

6The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.

8Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Jülich 52425, Germany.

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Wei Zhang

3Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China.

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For correspondence: wzhang0@mail.xjtu.edu.cn fengrao@szu.edu.cn ema@jhu.edu

Feng Rao

1College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.

9State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

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For correspondence: wzhang0@mail.xjtu.edu.cn fengrao@szu.edu.cn ema@jhu.edu

Evan Ma

10Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.

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For correspondence: wzhang0@mail.xjtu.edu.cn fengrao@szu.edu.cn ema@jhu.edu

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