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Nano–opto-electro-mechanical switches operated at CMOS-level voltages

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Science  15 Nov 2019:
Vol. 366, Issue 6467, pp. 860-864
DOI: 10.1126/science.aay8645

Article Information

vol. 366 no. 6467 860-864

PubMed: 
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History: 
  • Received for publication August 5, 2019
  • Accepted for publication October 21, 2019
  • .

Author Information

  1. Christian Haffner1,2,3,*,
  2. Andreas Joerg1,
  3. Michael Doderer1,
  4. Felix Mayor1,,
  5. Daniel Chelladurai1,
  6. Yuriy Fedoryshyn1,
  7. Cosmin Ioan Roman4,
  8. Mikael Mazur5,
  9. Maurizio Burla1,
  10. Henri J. Lezec3,
  11. Vladimir A. Aksyuk3,
  12. Juerg Leuthold1
  1. 1Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland.
  2. 2Maryland NanoCenter, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.
  3. 3Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  4. 4Micro- and Nanosystems, ETH Zurich, 8092 Zurich, Switzerland.
  5. 5Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden.
  1. *Corresponding author. Email: christian.haffner{at}nist.gov
  • Present address: Department of Applied Physics and Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, CA 94305, USA.

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