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Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

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Science  29 Nov 2019:
Vol. 366, Issue 6469, pp. 1125-1128
DOI: 10.1126/science.aav8076

Article Information

vol. 366 no. 6469 1125-1128

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History: 
  • Received for publication October 22, 2018
  • Resubmitted August 21, 2019
  • Accepted for publication November 4, 2019
  • .

Author Information

  1. Yi Wang1,2,*,
  2. Dapeng Zhu1,*,
  3. Yumeng Yang1,
  4. Kyusup Lee1,
  5. Rahul Mishra1,
  6. Gyungchoon Go3,
  7. Se-Hyeok Oh4,
  8. Dong-Hyun Kim5,
  9. Kaiming Cai1,
  10. Enlong Liu1,
  11. Shawn D. Pollard1,
  12. Shuyuan Shi1,
  13. Jongmin Lee1,
  14. Kie Leong Teo1,
  15. Yihong Wu1,
  16. Kyung-Jin Lee3,4,5,6,
  17. Hyunsoo Yang1,
  1. 1Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore.
  2. 2Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China.
  3. 3Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.
  4. 4Department of Nano-Semiconductor and Engineering, Korea University, Seoul 02841, Korea.
  5. 5Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, Korea.
  6. 6KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea.
  1. Corresponding author. Email: eleyang{at}nus.edu.sg
  1. * These authors contributed equally to this work.

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