Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

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Science  09 Apr 2021:
Vol. 372, Issue 6538, pp. 195-200
DOI: 10.1126/science.abf5825

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Seeding 2D crystals

Small, single crystals are often used to direct the growth of larger, bulk single crystals. Xu et al. modified these methods to grow single-crystal films of a two-dimensional (2D) semiconductor, 2H molybdenum ditelluride (2H MoTe2), on an amorphous glass surface. After coating the wafer with a 1T′ MoTe2 film, a small 2H MoTe2 crystallite was placed on the wafer. The wafer was capped with an alumina film, except for a small hole above the seed region that allowed entry of additional tellurium during the heating process that drove the phase transition and epitaxial growth of 2H MoTe2.

Science, this issue p. 195


The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.

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