Research Article

Phase-change heterostructure enables ultralow noise and drift for memory operation

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Science  22 Aug 2019:
eaay0291
DOI: 10.1126/science.aay0291

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Abstract

Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, e.g., phase-change random access memory (PCRAM) based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) consisting of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure nor much increased fabrication cost.

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