Intermediate bosonic metallic state in the superconductor-insulator transition

Chao Yang; Yi Liu; Yang Wang; Liu Feng; Qianmei He; Jian Sun; Yue Tang; Chunchun Wu; Jie Xiong; Wanli Zhang; Xi Lin; Hong Yao; Haiwen Liu; Gustavo Fernandes; Jimmy Xu; James M. Valles; Jian Wang; Yanrong Li

doi:10.1126/science.aax5798

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Intermediate bosonic metallic state in the superconductor-insulator transition

Chao Yang¹,*,
Yi Liu²,³,*,
Yang Wang¹,
Liu Feng¹,
Qianmei He¹,
Jian Sun²,³,
Yue Tang²,³,
Chunchun Wu¹,
Jie Xiong¹,†,
Wanli Zhang¹,
Xi Lin²,³,⁴,⁵,
Hong Yao³,⁶,⁷,
Haiwen Liu⁸,
Gustavo Fernandes⁹,
Jimmy Xu⁹,¹⁰,
James M. Valles Jr.¹⁰,†,
Jian Wang²,³,⁴,⁵,⁷,†,
Yanrong Li¹

¹State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
²International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
³Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
⁴CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China.
⁵Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
⁶Institute for Advanced Study, Tsinghua University, Beijing 100084, China.
⁷State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China.
⁸Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China.
⁹School of Engineering, Brown University, 182 Hope Street, Providence, RI02912, USA.
¹⁰Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912, USA.

↵†Corresponding author. E-mail: jianwangphysics{at}pku.edu.cn (J.W.); james_valles_jr{at}brown.edu (J.M.V.J); jiexiong{at}uestc.edu.cn (J.X.)

↵* These authors contributed equally to this work.

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Science 14 Nov 2019:
eaax5798
DOI: 10.1126/science.aax5798

Chao Yang

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Yi Liu

International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.

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Yang Wang

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Liu Feng

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Qianmei He

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Jian Sun

International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.

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Yue Tang

International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.

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Chunchun Wu

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Jie Xiong

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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For correspondence: jianwangphysics@pku.edu.cn james_valles_jr@brown.edu jiexiong@uestc.edu.cn

Wanli Zhang

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Xi Lin

International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China.Beijing Academy of Quantum Information Sciences, Beijing 100193, China.

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Hong Yao

Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.Institute for Advanced Study, Tsinghua University, Beijing 100084, China.State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China.

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Haiwen Liu

Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China.

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Gustavo Fernandes

School of Engineering, Brown University, 182 Hope Street, Providence, RI02912, USA.

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Jimmy Xu

School of Engineering, Brown University, 182 Hope Street, Providence, RI02912, USA.Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912, USA.

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James M. Valles

Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912, USA.

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For correspondence: jianwangphysics@pku.edu.cn james_valles_jr@brown.edu jiexiong@uestc.edu.cn

Jian Wang

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For correspondence: jianwangphysics@pku.edu.cn james_valles_jr@brown.edu jiexiong@uestc.edu.cn

Yanrong Li

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

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Abstract

Whether a metallic ground state exists in a two-dimensional system beyond Anderson localization remains an unresolved question. Here, we study how quantum phase coherence evolves across superconductor-metal-insulator transitions via magneto-conductance quantum oscillations in nanopatterned high-temperature superconducting films. We tune the degree of phase coherence by varying the etching time of our films. Between the superconducting and insulating regimes, we detect a robust intervening anomalous metallic state characterized by saturating resistance and oscillation amplitude at low temperatures. Our measurements suggest that the anomalous metallic state is bosonic and that the saturation of phase coherence plays a prominent role in its formation.

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Intermediate bosonic metallic state in the superconductor-insulator transition

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