Supporting Online Material

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, L. A. Ponomarenko

Materials/Methods, Supporting Text, Tables, Figures, and/or References

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  • Materials and Methods
  • SOM Text
  • Figs. S1 to S5
  • References (31-35)