Supplementary Materials
Phase-change heterostructure enables ultralow noise and drift for memory operation
Keyuan Ding, Jiangjing Wang, Yuxing Zhou, He Tian, Lu Lu, Riccardo Mazzarello, Chunlin Jia, Wei Zhang, Feng Rao, Evan Ma
Materials/Methods, Supplementary Text, Tables, Figures, and/or References
- Materials and Methods
- Figs. S1 to S10
- References
- Correction (11 October 2019): An additional figure, fig. S11, has been added, which shows four additional cycle endurance tests of the phase-change heterostructure.
- The original version is accessible here.
