Supplementary Materials

Phase-change heterostructure enables ultralow noise and drift for memory operation

Keyuan Ding, Jiangjing Wang, Yuxing Zhou, He Tian, Lu Lu, Riccardo Mazzarello, Chunlin Jia, Wei Zhang, Feng Rao, Evan Ma

Materials/Methods, Supplementary Text, Tables, Figures, and/or References

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  • Materials and Methods
  • Figs. S1 to S10
  • References
 
Correction (11 October 2019): An additional figure, fig. S11, has been added, which shows four additional cycle endurance tests of the phase-change heterostructure.
The original version is accessible here.