RT Journal Article
SR Electronic
T1 Strained-Layer Epitaxy of Germanium-Silicon Alloys
JF Science
JO Science
FD American Association for the Advancement of Science
SP 127
OP 131
DO 10.1126/science.230.4722.127
VO 230
IS 4722
A1 Bean, John C.
YR 1985
UL http://science.sciencemag.org/content/230/4722/127.abstract
AB Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics.