PT  - JOURNAL ARTICLE
AU  - Choi, K. J.
AU  - Biegalski, M.
AU  - Li, Y. L.
AU  - Sharan, A.
AU  - Schubert, J.
AU  - Uecker, R.
AU  - Reiche, P.
AU  - Chen, Y. B.
AU  - Pan, X. Q.
AU  - Gopalan, V.
AU  - Chen, L.-Q.
AU  - Schlom, D. G.
AU  - Eom, C. B.
TI  - Enhancement of Ferroelectricity in Strained BaTiO<sub>3</sub> Thin Films
AID  - 10.1126/science.1103218
DP  - 2004 Nov 05
TA  - Science
PG  - 1005--1009
VI  - 306
IP  - 5698
4099  - http://science.sciencemag.org/content/306/5698/1005.short
4100  - http://science.sciencemag.org/content/306/5698/1005.full
SO  - Science2004 Nov 05; 306
AB  - Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.