RT Journal Article
SR Electronic
T1 Observation of the Spin Hall Effect in Semiconductors
JF Science
JO Science
FD American Association for the Advancement of Science
SP 1910
OP 1913
DO 10.1126/science.1105514
VO 306
IS 5703
A1 Kato, Y. K.
A1 Myers, R. C.
A1 Gossard, A. C.
A1 Awschalom, D. D.
YR 2004
UL http://science.sciencemag.org/content/306/5703/1910.abstract
AB Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.