RT Journal Article
SR Electronic
T1 Topology-Driven Magnetic Quantum Phase Transition in Topological Insulators
JF Science
JO Science
FD American Association for the Advancement of Science
SP 1582
OP 1586
DO 10.1126/science.1230905
VO 339
IS 6127
A1 Zhang, Jinsong
A1 Chang, Cui-Zu
A1 Tang, Peizhe
A1 Zhang, Zuocheng
A1 Feng, Xiao
A1 Li, Kang
A1 Wang, Li-li
A1 Chen, Xi
A1 Liu, Chaoxing
A1 Duan, Wenhui
A1 He, Ke
A1 Xue, Qi-Kun
A1 Ma, Xucun
A1 Wang, Yayu
YR 2013
UL http://science.sciencemag.org/content/339/6127/1582.abstract
AB Topological insulators owe their exotic properties to the peculiarities of their band structure, and one can induce a transition between a topologically trivial and nontrivial material by chemical doping. Now, J. Zhang et al. (p. 1582) have gone a step furtherâ€”simultaneously observing that a magnetic quantum transition as the ratio of Se and Te is varied in Bi2(SexTe1-x)3 thin films grown by molecular beam epitaxy and doped with magnetic Cr. Photoemission and transport experiments, as well as density functional calculations, imply that the topological transition induces magnetismThe breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.